A silicon avalanche photodetector fabricated with standard ...

The silicon avalanche photodiode (Si APD) is a photon detection device that offers high internal gain. It is ideal for use in high-speed, ultra-low-light-level ...

由 MJ Lee 著作 · 2010 · 被引用 90 次 — A CMOS-APD based on N+/P-well junction is fabricated and characterized with the goal of achieving high-gain and high-speed photodetectors. Its current-voltage ...

由 R Paschotta 著作 · 被引用 9 次 — Silicon-based avalanche photodiodes are sensitive in the wavelength region from ≈ 450 to 1000 nm (sometimes up to 1100 nm), with the maximum responsivity ...

Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high ...

The detector chip is hermetically-sealed behind a flat glass window in a modified TO-. 18 package. The useful diameter of the photosensitive surface is 0.5 mm.

APDs are photodiodes with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than PIN ...

An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that exploit the photoelectric effect to ...

The large-area, UV-enhanced Silicon Avalanche Photodiodes (Si APDs) are intended for use in a wide variety of broadband low-light-level applications covering ...

Thorlabs' Silicon Avalanche Photodetectors (APD) are designed to offer increased sensitivity and lower noise compared to standard PIN detectors, making them ...